Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2830
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 20 A
PT Total power dissipation
Tj Junction temperature 200
T
stg
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
T
=25℃
mb
Storage temperature -65~200
200 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance from junction to mounting base 1.0
th j-mb
℃/W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2830
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=0.1A ; IB=0 400 V
Collector-emitter saturation voltage IC=12A; IB=2.4A 1.2 V
Base-emitter saturation voltage IC=12A; IB=2.4A 1.5 V
Collector cut-off current VCB=500V; IE=0 0.1 mA
Collector cut-off current VCE=400V; IB=0 0.1 mA
Emitter cut-off current VEB=7V; IC=0 0.1 mA
DC current gain IC=2.4A ; VCE=5V 15 50
DC current gain IC=12A ; VCE=5V 10
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2830
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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