Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2827
DESCRIPTION ·
·With TO-220C package
·High breakdown voltage
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·400V/7A switching regulator applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
PC Collector dissipation TC=25℃ 50 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 450 V
Emitter-base voltage Open collector 6 V
a=25℃)
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2827
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
CEO
I
EBO
(sat)
(sat)
Collector-emitter breakdown voltage IC=10mA ; IB=0 450 V
Emitter-base breakdown voltage IE=1mA ; IC=0 6 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
Collector cut-off current VCB=500V ;IE=0 100
Collector cut-off current VCE=450V ; IB=0 100
Emitter cut-off current VEB=5V; IC=0 100
=4A; IB=0.8A 1.0 V
C
=4A; IB=0.8A 1.5 V
C
μA
μA
μA
hFE DC current gai n IC=3A ; VCE=2V 10
fT Transition frequency IC=0.5A ; VCE=10V 20 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2827
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Loading...