Datasheet 2SC2816 Datasheet (HIT)

2SC2816

Silicon NPN Triple Diffused

Application

High voltage, high speed and high power switching

Outline

TO-220AB

1. Base

2. Collector

1

2

3

(Flange)

3. Emitter

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Base current I
Collector power dissipation PC*

CBO

CEO

EBO

C

C(peak)

B

1

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. Value at TC = 25°C.

500 V
400 V
7V
5A
10 A

2.5 A
40 W

2SC2816

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to emitter sustain
voltage

Emitter to base breakdown
voltage

Collector cutoff current I

DC current transfer ratio h

Collector to emitter saturation
voltage

Base to emitter saturation
voltage

Turn on time t
Storage time t
Fall time t

Note: 1. Pulse test.

V

CEO(sus)

V

CEX(sus)

V

(BR)EBO

CBO

I

CEO

FE1

h

FE2

V

CE(sat)

V

BE(sat)

on

stg

f

400 — — V IC = 0.2 A, RBE = , L = 100

mH

400 — — V IC = 5 A, IB1 = –IB2 = 1.0 A

V

= –5.0 V, L = 180 µH,

BE

Clamped

7——VI

= 10 mA, IC = 0

E

— — 50 µA VCB = 400 V, IE = 0
— — 50 µA VCE = 350 V, RBE =
15 — — VCE = 5.0 V, IC = 2.5 A*
7—— V

= 5.0 V, IC = 5 A*

CE

— — 1.0 V IC = 2.5 A, IB = 0.5 A*

— — 1.5 V IC = 2.5 A, IB = 0.5 A*

— — 0.5 µs IC = 5 A, IB1 = –IB2 = 1.0 A,
— — 1.5 µs VCC ≅ 150 V
— 0.3 0.5 µs

1

1

1

1

Maximum Collector Dissipation Curve

60

(W)

C

40

20

Collector power dissipation P

0 50 100 150

Case temperature T

(°C)

C

100

Area of Safe Operation

i

C(peak)

10

I

(A)

C

(Continuous)

C(max)

DC Operation (T

1.0

Ta = 25°C, 1 Shot

0.1

Collector current I

0.01
13 3010 100

Collector to emitter voltage V

50

250 µs

PW = 10 ms

1 ms

C

= 25°C)

25 µs

µs

300 1,000

(V)

CE

2

100

80

Collector Current Derating Rate

IS/B Limit Area

(°C/W)

j-c

2SC2816

Transient Thermal Resistance

10

3

10 ms–10 s

1.0

60

40

20

Collector current derating rate (%)

0 50 100 150

Case temperature T

(°C)

C

Reverse Bias Area of Safe Operation

10

325 V, 10 A

8

(A)

C

6

4

Collector current I

2

I

= –1.0 A

B2

200 500

100 300 4000

Collector to emitter voltage VCE (V)

400 V,
5 A

450 V,

1.0 A

0.3

10 µs–10 ms

0.1

0.03

Thermal resistence θ

TC = 25°C

0.01

0.1 1.00.01

0.1 1.00.01

10 (s)

10 (ms)

Time t

Collector to Emitter Voltage vs.

Base to Emitter Resistance

600

(V)

CER

IC = 1 mA

500

400

Collector to emitter voltage V

300

1 k 10 k 100 k 1 M100

Base to emitter resistance R

BE

(Ω)

3

2SC2816

Typical Output Characteristics

5

4

(A)

C

3

2

Collector current I

1

1340

Collector to emitter voltage V

DC Current Transfer Ratio vs.

Collector Current

100

FE

30

75°C

25°C

= –25°C

T

C

10

3

DC current transfer ratio h

1

0.03 0.1 1.0 10

0.01
Collector current I

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.05 A

TC = 25°C

IB = 0

25

(V)

CE

VCE = 5 V

C

(A)

3

0.3

Typical Transfer Characteristics

5

TC = 25°C
V

= 5 V

CE

4

(A)

C

3

2

Collector current I

1

0.4 1.2 1.60

0.8 2.0

Base to emitter voltage V

BE

(V)

Collector to Emitter Saturation

(V)

CE(sat)

10

Voltage vs. Base Current

3

1.0
2 A

0.3

1 A

IC = 0.5 A

0.1

0.03
TC = 25°C

0.01

0.003 0.01 0.03

0.001

Collector to emitter saturation voltage V

Base current IB (A)

0.1 0.3

1.0

2

4

2SC2816

Saturation Voltage vs.

(V)

CE(sat)

(V)

BE(sat)

10

3

1.0

Collector Current

V

BE(sat)

0.3
V

0.1

CE(sat)

0.03

0.01

Base to emitter saturation voltage V

Collector to emitter saturation voltage V

0.03 0.1 1.0 3

0.01 0.3
Collector current IC (A)

5
3

1.0

Switching Time vs. Collector Current

10

3

1.0

0.3

0.1

Switching time t (µs)

TC = 25°C
IC = 5 I

B

10

0.03

0.01

0.030.01 0.3 1.0

Switching Time vs. Case Temperature

t

stg

V

CC

IC = 5 I

0.1 103

Collector current I

t

stg

t

f

t

on

.

= 150 V

.

= –5 IB2

B1

(A)

C

Switching time t (µs)

0.3

0.1

0.05

t

f

t

on

IC = 5 A
I

= –I

B1

RL = 30 Ω

.

V

= 150 V

.

CC

250 75 100

50 125

Case temperature T

(°C)

C

B2

= 1 A

5

2SC2816

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this document without Hitachi’s permission.

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other reasons during operation of the user’s unit according to this document.

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performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
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herein.

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APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.

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6

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