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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2815
DESCRIPTION ·
·With TO-220C package
·High voltage;high speed
·Low collector saturation voltage
APPLICATIONS
·For use in horizontal deflection output
stages of TV’s and CTV’s circuits
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolut maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
P
tot
Tj Junction temperature 150
T
stg
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 250 V
Emitter-base voltage Open collector 6 V
Total power dissipation
Storage temperature -65~150
℃)
T
=25℃
C
40 W
℃
℃
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2815
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter sustaining voltage IC=50mA ; IB=0 250 V
CEO(SUS)
(BR)CBO
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-base breakdown voltage IC=1mA ; IE=0 300 V
Emitter-base breakdown voltage IE=1mA ; IC=0 6 V
Collector-emitter saturation voltage IC=4A ;IB=0.4A 1.0 V
Base-emitter saturation voltage IC=4A ;IB=0.4A 1.2 V
Collector cut-off current VCB=300V; IE=0 0.1 mA
Emitter cut-off current VEB=6.0V; IC=0 0.1 mA
hFE DC current gain IC=2.5A ; VCE=5V 40
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2815
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3
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