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固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2810
DESCRIPTION ·
·With TO-220C package
·High voltage,High speed
APPLICATIONS
·For power switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 7 A
ICM Collector current-peak 14 A
PC Collector dissipation TC=25℃ 50 W
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
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固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2810
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=3A ; VCE=4V 10
fT Transition frequency IC=0.5A ; VCE=12V 18 MHz
Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V
Collector-base breakdown voltage IC=1mA ; IE=0 500 V
Emitter-base breakdown voltage IE=1mA ; IC=0 7 V
Collector-emitter saturation voltage IC=3A; IB=0.6A 0.5 V
Base-emitter saturation voltage IC=3A; IB=0.6A 1.3 V
Collector cut-off current VCB=500V ;IE=0 10 μA
Emitter cut-off current VEB=7V; IC=0 10 μA
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2810
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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