Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2809
DESCRIPTION
·With TO-3PN package
·High speed switching
·High breakdown voltage
·Wide area of safe operation
APPLICATIONS
·For power amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2 A
ICM Collector current-Peak
PC Collector power dissipation
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 6 V
a=25℃)
T
=25℃
C
4 A
50 W
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2809
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CE
V
BE
I
CBO
I
EBO
(sat)
(sat)
Collector-emitter breakdown voltage IC=10mA ;IB=0 300 V
Emitter-base breakdown voltage IC=1mA ;IE=0 300 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
=1.5A; IB=0.3A 1.0 V
C
=1.5A; IB=0.3A 1.5 V
C
Collector cut-off current VCB=300V IE=0 100 μA
Emitter cut-off current VEB=6V; IC=0 100 μA
hFE DC current gai n IC=0.3A ; VCE=4V 50
fT Transition frequency IC=0.3A ; VCE=12V 20 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2809
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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