Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2794
DESCRIPTION ·
·With TO-126 package
·Low collector saturation voltage
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 60 V
CBO
V
Collector-emitter voltage Open base 60 V
CEO
V
Emitter -base voltage Open collector 5 V
EBO
IC Collector current (DC) 2 A
ICM Collector current-Peak 6 A
PC Collector power dissipation TC=25℃ 25 W
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2794
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter breakdown voltage IC=10mA; IB=0 60 V
(BR)CEO
V
Collector-emitter saturation voltage IC=1A; IB=0.1A 0.6 V
CEsat
VBE Base-emitter on voltage IC=1A ; VCE=2V 1.3 V
I
Collector cut-off current VCB=60V; IE=0 100 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 1 mA
EBO
h
DC current gain IC=150mA ; VCE=2V 50
FE-1
h
DC current gain IC=1A ; VCE=2V 25
FE-2
fT Transition frequency IC=100mA; VCE=5V 40 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2794
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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