Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2792
DESCRIPTION
·With TO-3P(I) package
·High breakdown voltage
·Excellent switching times
APPLICATIONS
·Switching regulator and high voltage
·Switching applications
·High speed DC-DC converter applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current-DC 2 A
ICM Collector current-peak 4 A
IB Base current 1 A
Collector-base voltage Open emitter 850 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 7 V
PT Total power dissipation TC=25℃ 80 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2792
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
Switching times
Collector-emitter breakdown voltage IC=10mA ,IB=0 800 V
(BR)CEO
Collector-base breakdown voltage IC=1mA ,IE=0 850 V
(BR)CBO
V
Collector-emitter saturation voltage IC=500mA; IB=50mA 1.0 V
CEsat
V
Base-emitter saturation voltage IC=500mA; IB=50mA 1.5 V
BEsat
I
Collector cut-off current VCB=800V; IE=0 100 μA
CBO
I
Emitter cut-off current VEB=7V; IC=0 1.0 mA
EBO
hFE DC current gain IC=0.5A ; VCE=5V 10
tr Rise time 1.0 μs
t
Storage time 4.0 μs
stg
VCC=400V; 2IB1=-IB2=0.1A;
RL=800Ω
tf Fall time
1.0 μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2792
PACKAGE OUTLINE
3
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2792
4
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