Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2791
DESCRIPTION
·With TO-3 package
·High collector breakdown voltage
·Excellent switching times
APPLICATIONS
·High speed and high voltage switching
·Switching regulator
·High speed DC-DC converter
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
IB Base current 3 A
PC Collector power dissipation TC=25℃ 100 W
Collector-base voltage Open emitter 900 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 7 V
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2791
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
(sat)
(sat)
Collector-emitter breakdown voltage IC=10mA ;IB=0 800 V
Collector-base breakdown voltage IC=1mA ;IE=0 900 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
Collector cut-off current VCB=800V; IE=0 100
=3A; IB=0.6A 1.0 V
C
=3A; IB=0.6A 1.5 V
C
μA
Emitter cut-off current VEB=7V; IC=0 1 mA
DC current gain IC=10mA ; VCE=5V 10
DC current gain IC=3A ; VCE=5V 10
Switching times
tr
t
stg
tf
Rise time 1.0
V
=400V ,IC=3A,
Storage time 3.5
Fall time
CC
I
=0.3A;IB2=-0.8A
B1
1.0
μs
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2791
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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