Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2788
DESCRIPTION
·With TO-3PN package
·High breakdown voltage
·Fast switching speed
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current-peak 16 A
IB Base current 3 A
PC Collector power dissipation
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
a=25℃)
Ta=25℃ 2.5
=25℃ 80
T
C
W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2788
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-emitter breakdown voltage
=10mA ;RBE=∞
C
400 V
V
(BR)CBO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE -2
(sat)
(sat)
Collector-base breakdown voltage IC=1mA ;IE=0 500 V
Emitter-base breakdown voltage IE=1mA ;IC=0 7 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
Collector cut-off current VCB=400V ;IE=0 100
Emitter cut-off current VEB=5V; IC=0 100
=4A ;IB=0.8A 1.0 V
C
=4A ;IB=0.8A 1.5 V
C
μA
μA
DC current gain IC=0.8A ; VCE=5V 15 50
DC current gain IC=4A ; VCE=5V 8
fT Transition frequency IC=0.8A ; VCE=10V 20 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2788
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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