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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
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2SC2782
VHF BAND POWER AMPLIFIER APPLICATIONS
l Output Power : Po = 80W (Min.)
(f = 175MHz, V
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL RATING UNIT
(Tc = 25°C)
= 12.5V, Pi = 18W)
CC
2SC2782
Unit in mm
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current IC 20 A
Collector Power Dissipation PC 220 W
Junction Temperature Tj 175 °C
Storage Temperature Range T
36 V
CBO
16 V
CEO
4 V
EBO
−65~175 °C
stg
JEDEC —
EIAJ —
TOSHIBA 2−13C1A
Weight: 5.5g
000707EAA1
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury o
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction o
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energ
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this documen
shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed b
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION o
others.
· The information contained herein is subject to change without notice.
2001-01-31 1/3
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2SC2782
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V
Collector-Emitter Breakdown Voltage V
Emitter-Base Breakdown Voltage V
DC Current Gain hFE V
Collector Output Capacitance Cob
Output Power Po 80 90 ― W
Power Gain Gp 6.4 6.8 ― dB
Collector Efficiency ηC
Series Equivalent Input Impedance Zin —
Series Equivalent Output Impedance Z
(Tc = 25°C)
(BR) CBOIC
(BR) CEOIC
(BR) EBOIE
out
= 20mA, IE = 0 36 — — V
= 50mA, IB = 0 16 — — V
= 1mA, IC = 0 4 — — V
= 5V, IC = 10A * 10 — —
CE
= 12.5V, IE = 0
V
CB
f = 1MHz
(Fig.)
= 12.5V, f = 175MHz
V
CC
Pi = 18W
= 12.5V
V
CC
f = 175MHz, Po = 80W
— — 320 pF
60 70 — %
1.0
—
+j1.5
+j1.8
1.2
— Ω
— Ω
* Pulse Test: Pulse Width ≤ 100µs, Duty Cycle ≤ 3%
CAUTION
Beryllia Ceramics is used in this product. The dust or vapor can be dangerous to humans. Do not break, cut, crush
or dissolve chemically. Dispose of this product properly according to law. Do not intermingle with normal industrial
or domestic waste.
2001-01-31 2/3
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Fig. Po TEST CIRCUIT
2SC2782
CAUTION
These are only typical curves and devices are not necessarily guaranteed at these curves.
2001-01-31 3/3
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