Datasheet 2SC2776 Datasheet (HIT)

Application

• VHF amplifier

• Mixer, Local oscillator

Outline

MPAK

2SC2776

Silicon NPN Epitaxial Planar

ADE-208-1077 (Z)

1st. Edition

Mar. 2001

3

1

2

1. Emitter

2. Base

3. Collector

2SC2776

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P

CBO

CEO

EBO

C

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V

(BR)CBO

voltage
Collector to emitter breakdown

V

(BR)CEO

voltage
Emitter to base breakdown

V

(BR)EBO

voltage
Collector cutoff current I

CBO

DC current transfer ratio hFE*
Collector to emitter saturation

V

CE(sat)

voltage
Collector output capacitance Cob — 1.1 — pF VCB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product f

T

Noise figure NF — 5.5 — dB VCE = 6 V, IC = 1 mA,

Power gain PG — 17 — dB VCE = 6 V, IC = 1 mA,

Note: 1. The 2SC2776 is grouped by hFE as follows.

Grade A B C

Mark VA VB VC
h

FE

35 to 70 60 to 120 100 to 200

30 — — V IC = 10 µA, IE = 0

20 — — V IC = 1 mA, RBE = ∞

4——VI

— — 0.5 µAV

1

35 — 200 V
— 0.8 1.2 V IC = 10 mA, IB = 1 mA

— 320 — MHz VCE = 6 V, IC = 1 mA

30 V
20 V
4V
30 mA
100 mW

= 10 µA, IC = 0

E

= 10 V, IE = 0

CB

= 6 V, IC = 1 mA

CE

f = 100 MHz, R

f = 100 MHz, R
R

= 550 Ω, Unneutralized

L

= 50 Ω

g

= 100 Ω,

g

2

2SC2776

Maximum Collector Dissipation Curve

150

(mW)

C

100

50

Collector Power Dissipation P

0

Ambient Temperature Ta (°C)

Typical Output Characteristics (2)

5

4

(mA)

C

3

50

40

30

20

2

Typical Output Characteristics (1)

20

200

240

180

160

140

120

100

(mA)

C

16

12

80

8

60

PC = 100 mW

40

Collector Current I

4

20 µA
IB = 0

15010050

0

41220816

Collector to Emitter Voltage V

CE

(V)

Typical Transfer Characteristics (1)

20

16

(mA)

C

VCE = 6 V

12

8

1

Collector Current I

0

41220816

Collector to Emitter Voltage V

10 µA

IB = 0

CE

(V)

4

Collector Current I

0

0.60 0.64 0.68 0.72 0.76 0.80
Base to Emitter Voltage V

BE

(V)

3

2SC2776

5

4

(mA)

C

3

Typical Transfer Characteristics (2)

VCE = 6 V

DC Current Transfer Ratio vs.

Collector Current

140

VCE = 6 V

120

FE

100

80

2

1

Collector Current I

0

0.60 0.64 0.68 0.72 0.76 0.80
Base to Emitter Voltage V

BE

(V)

Collector Output Capacitance vs.

Collector to Base Voltage

2.0

(pF)

1.8

ob

f = 1 MHz
I

= 0

E

1.6

1.4

1.2

1.0

0.8

Collector Output Capacitance C

0.6

0.1 0.2 0.5 1.0 2 5 10 20
Collector to Base Voltage V

CB

(V)

60

40

20

DC Current Transfer Ratio h

0

0.1 0.2 0.5 1.0 2 5 10 20
Collector Current I

(mA)

C

Reverse Transfer Capacitance vs.

Collector to Emitter Voltage

2.8

(pF)

2.4

re

2.0

1.6

f = 1 MHz
I

= –1 mA

E

1.2

0.8

0.4

Reverse Transfer Capacitance C

0

0.1 0.2 0.5 1.0 2 5 10 20

Collector to Emitter Voltage V

CE

(V)

4

2SC2776

Reverse Transfer Capacitance

vs. Emitter Current

1.0

(pF)

re

0.8

0.6

0.4
VCE = 10 V
f = 1 MHz

0.2

Reverse Transfer Capacitance C

0
–0.1 –2–0.5–0.2 –1.0 –5

Emitter Current I

Noise Figure vs. Collector to

Emitter Voltage

14

12

10

8

6

4

Noise Figure NF (dB)

IC = 1 mA
f = 100 MHz
R

= 50 Ω

g

2

(mA)

E

Gain Bandwidth Product vs.

Collector Current

450
400

VCE = 6 V

350

(MHz)

T

300
250
200
150
100

50

Gain Bandwidth Product f

0

0.1 0.50.2 1.0 201052
Collector Current I

Noise Figure vs. Collector Current

12

10

8

6

4

Noise Figure NF (dB)

2

(mA)

C

VCE = 6 V
f = 100 MHz

= 50 Ω

R

g

0

0.1 20.50.2 1.0 20510
Collector to Emitter Voltage V

CE

(V)

Power Gain Test Circuit

IN

f = 100 MHz

300 p

Rg = 100 Ω

3 k

D.U.T.

500

V

0.01 µ

0.01 µ

EE

10 p
max

0

0.1 20.50.2 1.0 5 10

0.1 µ

Collector Current I

OUT

(mA)

C

RL = 550 Ω

V

0.01 µ

CC

Unit R : Ω

C : F

5

2SC2776

Package Dimensions

As of January, 2001

Unit: mm

0.4

+ 0.10
– 0.05

0.95

0.95

1.9 ± 0.2

2.95 ± 0.2

0.65

+ 0.2

1.5 ± 0.15

0.65

0.3

+ 0.2

– 0.6

2.8

– 0.1

1.1

+ 0.10

0.16

– 0.06

0 – 0.1

Hitachi Code
JEDEC
EIAJ
Mass

(reference value)

MPAK
—
Conforms

0.011 g

6

2SC2776

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

URL NorthAmerica : http://semiconductor.hitachi.com/

Europe : http://www.hitachi-eu.com/hel/ecg
Asia : http://sicapac.hitachi-asia.com
Japan : http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> [phone]
Fax: <1>[phone]

Hitachi Europe GmbH
Electronic Components Group
Dornacher Straβe 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160

Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877

URL : http://www.hitachi.com.sg
Hitachi Asia Ltd.

(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw

Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk

Colophon 2.0

7