Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2774
DESCRIPTION
·With MT-200 package
·High power dissipation
·High current capability
APPLICATIONS
·For audio power amplifier and general
purpose applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 17 A
IB Base current 5 A
Collector-base voltage Open emitter 200 V
Collector-emitter voltage Open base 200 V
Emitter-base voltage Open collector 6 V
℃)
PC Collector power dissipation TC=25℃ 200 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2774
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
Collector-emitter breakdown voltage IC=25mA ; IB=0 200 V
(BR)CEO
Emitter-base breakdown voltage IE=1mA ; IC=0 6 V
(BR)EBO
V
Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V
CEsat
I
Collector cut-off current VCB=200V; IE=0 100
CBO
I
Emitter cut-off current VEB=5V; IC=0 100
EBO
h
DC current gain IC=5A ; VCE=4V 50 140
FE
Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 300 pF
fT Transition frequency IC=2A ; VCE=12V 20 MHz
μA
μA
hFE classifications
O Y
50-100 70-140
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2774
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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