Page 1
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2773
DESCRIPTION
·With MT-200 package
·High current capability
APPLICATIONS
·For audio power amplifier and general
purpose applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2
3 Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 200 V
CBO
V
Collector-emitter voltage Open base 200 V
CEO
V
Emitter-base voltage Open collector 6 V
EBO
I
C
I
B
P
C
Collector current 15 A
Base current 5 A
Collectorl power dissipation TC=25 150 W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
Page 2
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2773
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=50mA; IB=0 200 V
Emitter-base breakdown voltage IE=1mA; IC=0 6 V
Collector-emitter saturation voltage IC=10 A;IB=1 A 3.0 V
Collector cut-off current VCB=200V; IE=0 100 µA
Emitter cut-off current VEB=6V; IC=0 100 µA
hFE DC current gain IC=5A ; VCE=4V 50 180
f
T
Transition frequency IC=0.5A ; VCE=12V 20 MHz
COB Output capacitance IE=0; VCB=10V;f=1MHz 250 pF
hFE classifications
O P Y
50-100 70-140 90-180
2
Page 3
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2773
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Loading...