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固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2767
DESCRIPTION ·
·With TO-220C package
·High speed switching
·High reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
IB Base current 1.5 A
PC Collector power dissipation TC=25℃ 40 W
Tj Junction temperature 150 ℃
T
stg
Collector-base voltage Open emitter 250 V
Collector-emitt er voltage Open base 200 V
Emitter-base voltage Open collector 7 V
Storage temperature -55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction case 3.0 ℃/W
th j-C
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2767
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Switching times
ton Turn-on time 1.0 μs
Collector-emitter breakdown voltage IC=25mA ; IB=0 200 V
Collector-base breakdown voltage IC=100μA ; IE=0 250 V
Emitter-base breakdown voltage IE=100μA ; IC=0 7 V
Collector-emitter saturation voltage IC=2A; IB=0.8A 0.2 V
Base-emitter saturation voltage IC=2A; IB=0.8A 1.0 V
Collector cut-off current VCB=250V ;IE=0 10 μA
Emitter cut-off current VEB=7V; IC=0 100 μA
DC current gain IC=1A ; VCE=5V 20 80
t
Storage time 2.0 μs
stg
tf Fall time
2
=4A; IB1=-IB2=-0.4A
I
C
=20Ω
R
L
1.0 μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2767
PACKAGE OUTLINE
3
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2767
4
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