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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2761
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor controls
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS MAX UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 30 A
IB Base current 6 A
PC Collector power dissipation
Tj
Collector-base voltage Open emitter 450 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
Junction temperature 200
a=25℃)
T
=25℃
C
200 W
℃
T
stg
Storage temperature -65~200
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2761
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
(sat)
(sat)
Collector-emitter sustaining voltage IC=0.1A ; IB=0 400 V
Collector-base breakdown voltage IC=1m A ; IE=0 450 V
Emitter-base breakdown voltage IE=1m A ; IC=0 7 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
Collector cut-off current VCB=450V IE=0 100
Emitter cut-off current VEB=7V; IC=0 100
=20A; IB=4A 1.5 V
C
=20A; IB=4A 1.7 V
C
μA
μA
hFE DC current gai n IC=15A ; VCE=2V 8
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2761
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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