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INCHANGE Semiconductor isc RF Product Specification
isc Silicon NPN RF Transistor 2SC2757
DESCRIPTION
·Low Noise
·High Current-Gain Bandwidth Product
APPLICATIONS
·Designed for use in VHF RF amplifier, local oscillator, mixer.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
=25℃)
a
V
CBO
V
CEO
V
EBO
I
P
T
T
C
stg
Collector-Base Voltage 30 V
Collector-Emitter Voltage 15 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 50 mA
Collector Power Dissipation
C
J
=25℃
@T
C
Junction Temperature 125 ℃
Storage Temperature Range -55~125 ℃
0.15 W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc RF Product Specification
isc Silicon NPN RF Transistor 2SC2757
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE(
I
CBO
h
FE
f
T
C
OB
r
bb’ • CC
Collector-Emitter Saturation Voltage IC= 10mA ; IB= 1mA 0.5 V
)
sat
Collector Cutoff Current VCB= 12V; IE= 0 0.1
DC Current Gain IC= 5mA ; VCE= 10V 60 240
Current-Gain—Bandwidth Product IC= 5mA ; VCE= 10V 800 1100 MHz
Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 1.5 pF
Base Time Constant IC= 5mA ; VCB= 10V;f= 31.9MHz 10 15 ps
h
Classifications
FE
Marking T32 T33 T34
h
FE
60-120 90-180 120-240
μA
isc Website：www.iscsemi.cn
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