Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2751
DESCRIPTION ·
·With TO-3N package
·High voltage ,high speed
APPLICATIONS
·For use in high voltage ,high speed
and power switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
ICM Collector current-peak 30 A
IB Base current 7.5 A
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
℃)
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
120 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2751
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
Collector-emitter sustaining voltage
CEO(SUS)
V
Collector-emitter saturation voltage IC=10A ;IB=2A 1.0 V
CEsat
V
Base-emitter saturation voltage IC=10A ;IB=2A 1.5 V
BEsat
=10A ;IB=2A; L=50μH
C
400 V
I
Collector cut-off current VCB=400V; IE=0 100
CBO
=400V; V
V
I
Collector cut-off current
CEX
I
Emitter cut-off current VEB=5V; IC=0 10
EBO
h
DC current gain IC=2A ; VCE=5V 15 80
FE-1
h
DC current gain IC=5A ; VCE=5V 10
FE-2
h
DC current gain IC=10A ; VCE=5V 7
FE-3
Switching times
ton Turn-on time 1.0
ts Storage time 2.5
tf Fall time
CE
Ta=125℃
=10A;IB1=-IB2=2A
I
C
R
=15Ω; VCC≈150V
L
BE(off)
=-1.5V
0.7
100
1.0
μA
μA
mA
μA
μs
μs
μs
h
Classifications
FE-1
N R O Y
15-30 20-40 30-60 40-80
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2751
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
Loading...