Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2750
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Current Capability
·High Power Dissipation
APPLICATIONS
·Designed for high speed, high current switching industrial
applications.
ABSOLUTE MAXIMUM RATINGS(T
= 100V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
Collector-Base Voltage 150 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 15 A
Collector Current-Peak 30 A
B Base Current-Continuous 5 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
100 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2750
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
CEO(SUS)
V
CEX(SUS)1
V
CEX(SUS)2
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
= 10A; IB1= 1A; L= 100μH
C
= 10A; IB1= -IB= 1A; Ta= 125℃
I
C
L= 180μH; Clamped
= 20A; IB1= 2A; IB2= 1A;
I
C
= 125℃; L= 180μH; Clamped
T
a
100 V
150 V
100 V
V
CE(
V
BE(
I
CBO
I
CER
I
CEX
I
EBO
h
FE-1
h
FE-2
Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 0.6 V
)
sat
Base-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V
)
sat
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain IC= 5A; VCE= 5V 30 120
DC Current Gain IC= 10A; VCE= 5V 20
Switching Times
t
on
Turn-on Time 1.0
V
= 100V; IE= 0
CB
V
= 100V; RBE= 50Ω; Ta= 125℃
CE
= 100V;V
V
CE
VCE= 100V;V
V
= 5V; IC= 0
EB
= -1.5V;
BE(off)
= -1.5V;Ta=125℃
BE(off)
10
μA
1.0 mA
10
500
10
μA
μA
μs
= 10A, IB1= -IB2= 1A,
I
t
stg
t
f
Storage Time 1.5
Fall Time
C
V
≈ 50V; RL= 5Ω
CC
h
Classifications
FE-1
M L K
30-60 40-80 60-120
isc Website：www.iscsemi.cn
2
μs
0.3
μs
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