Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2749
DESCRIPTION
·With TO-3PN package
·High speed switching
·High V
·Low saturation voltage
APPLICATIONS
·For high voltage,high speed power
switching applications
PINNING
PIN DESCRIPTION
CBO
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
IB Base current 5 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
a=25℃)
T
=25℃
C
100 W
℃
T
Storage temperature -55~150
stg
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2749
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE -2
Collector-emitter sustaining voltage IC=10m A ; IB=0 400 V
Collector-base breakdown voltage IC=1m A ; IE=0 500 V
Emitter-base breakdown voltage IE=1m A ; IC=0 7 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
=6A; IB=1.2A 1.0 V
C
=6A; IB=1.2A 1.5 V
C
Collector cut-off current VCB=400V IE=0 100 μA
Emitter cut-off current VEB=5V; IC=0 100 μA
DC current gain IC=1A ; VCE=5V 15 80
DC current gain IC=5A ; VCE=5V 8
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2749
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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