Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2740
DESCRIPTION
·With TO-3PN package
·High speed switching
·High V
·Low saturation voltage
APPLICATIONS
·For high speed switching applications
PINNING
PIN DESCRIPTION
CBO
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
ICM Collector current-Peak
IB Base current 5 A
PC Collector power dissipation
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
TC=25℃ 100
=25℃ 2.5
T
a
20 A
W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2740
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE -2
Collector-emitter sustaining voltage IC=0.2A ;L=25mH 400 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
=5A; IB=1A 1.0 V
C
=5A; IB=1A 1.5 V
C
Collector cut-off current VCB=500V IE=0 100 μA
Emitter cut-off current VEB=5V; IC=0 100 μA
DC current gain IC=0.1A ; VCE=5V 15
DC current gain IC=5A ; VCE=5V 8
fT Transition frequency IC=0.5A ; VCE=10V 11 MHz
Switching times
ton
t
stg
Turn-on time 1.0 μs
Storage time 2.5 μs
VCC=10V
I
=5A; IB1=-IB2=1A
C
tf
Fall time
1.0 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2740
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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