Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2739
DESCRIPTION ·
·With TO-220C package
·High speed switching
·High V
CBO
·Low saturation voltage
APPLICATIONS
·For high speed switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 7 A
ICM Collector current-Peak
IB Base current 3 A
PC Collector power dissipation
Tj
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
Junction temperature 150
a=25℃)
T
=25℃
C
15 A
40 W
℃
T
stg
Storage temperature -55~150
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2739
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
(sat)
(sat)
Collector-emitter sustaining voltage IC=0.2A ;L=25mH 400 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
=3A; IB=0.6A 1.0 V
C
=3A; IB=0.6A 1.5 V
C
Collector cut-off current VCB=500V; IE=0 100 μA
Emitter cut-off current VEB=5V; IC=0 100 μA
DC current gain IC=0.1A ; VCE=5V 15
DC current gain IC=3A ; VCE=5V 8
fT Transition frequency IC=0.5 A ; VCE=10V 11 MHz
Switching times
ton
ts
Turn-on time 1.0 μs
Storage time 3.0 μs
VCC=100V ,IC=3A,
I
=-IB2=0.6A
B1
tf
Fall time
1.0 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2739
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
Loading...