Datasheet 2SC2735 Datasheet (HIT)

2SC2735

Silicon NPN Epitaxial

Application

UHF/VHF Local oscillator, frequency converter

Outline

MPAK

3

1

2

1. Emitter

2. Base

3. Collector

2SC2735

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P

CBO

CEO

EBO

C

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V

(BR)CBO

voltage
Collector to emitter breakdown

V

(BR)CEO

voltage
Emitter to base breakdown

V

(BR)EBO

voltage
Collector cutoff current I
Collector to emitter saturation

CBO

V

CE(sat)

voltage
DC current transfer ratio h

FE

Collector output capacitance Cob — 0.85 1.5 pF VCB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product f
Oscillating output voltage V

V

T

OSC1

OSC2

Conversion gain CG — 21 — dB VCC = 12 V, IC = 2 mA,

Noise figure NF — 6.5 — dB VCC = 12 V, IC = 2 mA,

Note: Marking is “JC”.

30 — — V IC = 10 µA, IE = 0

20 — — V IC = 1 mA, RBE = ∞

3——VI

— — 0.5 µAV
— — 1.0 V IC = 20 mA, IB = 4 mA

40 — — V

600 1200 — MHz VCE = 10 V, IC = 10 mA
— 210 — mV VCC = 12 V, IC = 7 mA,

— 130 — mV VCC = 12 V, IC = 7 mA,

30 V
20 V
3V
50 mA
150 mW

= 10 µA, IC = 0

E

= 10 V, IC = 0

CB

= 10 V, IC = 10 mA

CE

f

= 300 MHz

OSC

f

= 930 MHz

OSC

f = 200 MHz,
f

= 230 MHz (0dBm)

OSC

f = 200 MHz,
f

= 230 MHz (0dBm)

OSC

2

Maximum Collector Dissipation Curve

150

(mW)

C

2SC2735

DC Current Transfer Ratio

200

FE

160

vs. Collector Current

100

50

Collector Power Dissipation P

0

50

Ambient Temperature Ta (°C)

Gain Bandwidth Product

vs. Collector Current

2.0

1.6

(GHz)

T

1.2

0.8

0.4

Gain Bandwidth Product f

0

512

Collector Current I

100 150

VCE = 10 V

10 20 50

(mA)

C

120

80

40

DC Current Transfer Ratio h

0

10 20 50

512

Collector Current I

Collector Output Capacitance

vs. Collector to Base Voltage

2.0

(pF)

ob

1.6

1.2

0.8

0.4

Collector Output Capacitance C

0

512

10 20 50

Collector to Base Voltage V

VCE = 10 V

(mA)

C

IE = 0
f = 1 MHz

(V)

CB

3

2SC2735

Reverse Transfer Capacitance

vs. Collector to Base Voltage

2.0

(pF)

re

1.6

1.2

0.8

0.4

Reverse Transfer Capacitance C

0

512

Collector to Base Voltage V

Oscillating Output Voltage

vs. Collector Current

500

(mV)

400

osc1

Emitter Common
I

= 0 V

C

f = 1 MHz

10 20 50

(V)

CB

VCC = 12 V

= 300 MHz

f

osc

Base Time Constant
vs. Collector Current

20

(ps)

16

C

C

bb'

12

8

4

Base Time Constant r

0

Collector Current I

Oscillating Output Voltage

vs. Supply Voltage

250

(mV)

200

osc1

84

12 16 20

VCB = 10 V
f = 31.8 MHz

(mA)

C

300

200

100

Oscillating Output Voltage V

0

42

Collector Current I

6810

(mA)

C

150

100

50

Oscillating Output Voltage V

0

84

Supply Voltage V

IC = 7 mA
f

= 300 MHz

osc

12 16 20

(V)

CC

4

2SC2735

Oscillating Output Voltage

vs. Collector Current

200

(mV)

160

osc2

120

80

40

Oscillating Output Voltage V

0

42

Collector Current I

Conversion Gain vs. Collector Current

25

20

15

VCC = 12 V
f

= 930 MHz

osc

6810

(mA)

C

VCC = 12 V
f = 200 MHz
f

= 230 MHz

osc

(0 dBm)

Oscillating Output Voltage

vs. Supply Voltage

200

(mV)

160

osc2

120

80

40

Oscillating Output Voltage V

0

84

Supply Voltage V

Noise Figure vs. Collector Current

20

16

12

IC = 7 mA
f

= 930 MHz

osc

12 16 20

(V)

CC

10

5

Conversion Gain CG (dB)

0

42

Collector Current I

6810

(mA)

C

8

Noise Figure NF (dB)

4

0

Collector Current I

VCC = 12 V
f = 200 MHz
f

= 230 MHz

osc

(0 dBm)

21

345

(mA)

C

5

2SC2735

330

V

Ferrite Bead

1.2 p

2,200 p

UHF Oscillating Output Voltage Test Circuit

OSC2

L

3

1,000 p

1

2

D.U.T.

470

L

9 p

L

6.8 k
1,000 p

V

BB

V

osc

V

CC

120 k

ISV70

Output

1,000 p

Unit

C : F
R : Ω

V

T

10

26

5

L

L

1

2

8

(Dimensions in mm)

L1 : Polyurethane Coated Copper Wire φ1.0 mm
L2 : Polyurethane Coated Copper Wire φ0.8 mm
L3 : φ0.3 mm Enameled Copper wire, 10 Turns with 470 Ω (1/4W)Resistor.
Test Frequency : f

= 930 MHz

osc

Test Equipment : YHP 4271A Vector Voltmeter

Dimensions of Cavity

15

10

(Dimensions in mm)

6

V

VHF Oscillating Output Voltage Test Circuit

OSC1

2.2 k

V

Output

osc

1.5 p

7 p

4,700 p

1.1 M
L

1

1SV70

4,700 p

V

T

: Inside dia φ3 mm, φ3 mm Enameled Copper Wire 12 Turns

L

1

Test Frequency : f

= 300 MHz

osc

f

200

osc

1,000 p

12 p

Monitor

V

BB

D.U.T.

5.6 p

200 µ

20,000 p

4,700 p

Unit C : F

2SC2735

V

CC

R : Ω
L : H

7

2SC2735

VHF Conversion Gain : Noise Figure Test Circuit

f

= 230 MHz

osc

(0 dBm)

1.5 p

2,200 p

560

f = 200 MHz

L

Ferrite Bead

56 p

2

L

4

27 p

D.U.T.

L

4.2 p

1

L

2,200 p

V

BB

: Inside dia φ5 mm, φ0.5 mm Enameled Copper Wire 4 Turns

L

1

L

: Inside dia φ4 mm, φ0.5 mm Enameled Copper Wire 4 Turns

2

L

: Inside dia φ3 mm, φ0.2 mm Enameled Copper Wire 6 Turns

3

: Outside dia φ5 mm Bobbin, φ0.2 mm Enameled Copper Wire 16 Turns, using Ferrite bead.

L

4

330

3

2,200 p

18 p

80 p

V

CC

= 30 MHz

f

oat

= 50 Ω

R

L

Unit C : F

R : Ω

8

Unit: mm

3 – 0.4

+ 0.10
– 0.05

0.95

1.9 ± 0.2

2.95 ± 0.2

0.95

0.65

+ 0.2

1.5 ± 0.15

0.65

0.3

+ 0.2

– 0.6

2.8

– 0.1

1.1

+ 0.10

0.16

– 0.06

0 – 0.1

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

MPAK
—
Conforms

0.011 g

Cautions

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contact Hitachi’s sales office before using the product in an application that demands especially high
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of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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products.

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