Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2716
DESCRIPTION
·High Power Gain-
≥12dB,f= 27MHz, PO= 16W
: G
p
·High Reliability
APPLICATIONS
·Designed for RF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS (T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
I
CM
P
T
T
stg
Collector-Base Voltage 80 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 5 V
Collector Current 6 A
Collector Power Dissipation
=25℃
@T
C
C
Collector Power Dissipation
@T
=25℃
a
Junction Temperature 150 ℃
j
Storage Temperature Range -55~150 ℃
20
W
1.7
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2716
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE(
sat
I
CBO
I
CEO
I
EBO
h
FE
P
O
η
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.0 V
)
Collector Cutoff Current VCB= 30V; IE= 0 0.1 mA
Collector Cutoff Current VCE= 25V; IB= 0 B 0.1 mA
Emitter Cutoff Current VEB= 4V; IC= 0 0.1 mA
DC Current Gain IC= 0.5A; VCE= 5V 20 180
Output Power 16 18 W
VCC= 12V;Pin= 1W, f=27MHz
Power Efficiency
60 70 %
isc Website：www.iscsemi.cn
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