Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2707
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V
(BR)CEO
·High Power Dissipation
·Complement to Type 2SA1147
APPLICATIONS
·Designed for power switching amplifier and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
= 180V(Min.)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
stg
Collector-Base Voltage 180 V
Collector-Emitter Voltage 180 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 15 A
B Base Current-Continuous 5 A
Collector Power Dissipation
C
j
=25℃
@T
C
Junction Temperature 150
Storage Temperature -65~150
150 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2707
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
I
CBO
I
EBO
h
FE-1
h
FE-2
(sat)
Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 180 V
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 180 V
Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 3.0 V
Collector Cutoff Current VCB= 180V; IE= 0 100 μA
Emitter Cutoff Current VEB= 5V; IC= 0 100 μA
DC Current Gain IC= 1A ; VCE= 5V 55 160
DC Current Gain IC= 5A ; VCE= 5V 30
f
T
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 12V 80 MHz
isc Website：www.iscsemi.cn
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