Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2706
DESCRIPTION
·With TO-3P(I) package
·High power dissipation
APPLICATIONS
·For audio power amplifier and general
purpose applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
IB Base current 2 A
PT Total power dissipation
Collector-base voltage Open emitter 140 V
Collector-emitter voltage Open base 140 V
Emitter-base voltage Open collector 5 V
℃)
T
=25℃
C
100 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2706
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
Collector-emitter breakdown voltage IC=25mA ,IB=0 140 V
(BR)CEO
Emitter-base breakdown voltage IE=1mA ,IC=0 5 V
(BR)EBO
V
Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V
CEsat
I
Collector cut-off current VCB=140V; IE=0 10
CBO
I
Emitter cut-off current VEB=5V; IC=0 10
EBO
h
DC current gain IC=1A ; VCE=5V 55 160
FE-1
h
DC current gain IC=5A ; VCE=5V 35
FE-2
fT Transition frequency IC=1A ; VCE=5V 90 MHz
μA
μA
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2706
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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