Page 1
3
Base
1
Emitter
2
Millimeter
Min. Max.
A 3.90 4.10
B 3.05 3.25
C 1.42 1.62
D 15.1 15.5
E 2.97 3.27
F 0.66 0.86
G 2.44 2.64
H 1.27 REF.
J 0.36 0.48
K 0.36 0.51
L 45°
Elektronische Bauelemente
FEATURES
Small Reverse Transfer Capacitance.
Low Noise Figure.
CLASSIFICATION OF h
Product-Rank 2SC2668-R 2SC2668-O
Range 40~80 70~140 100~200
FE
2SC2668
0.02A , 40V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92S
REF.
2SC2668-Y
Collector
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Rating Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current - Continuous IC 20 mA
Collector Power Dissipation PC 200 mW
Junction, Storage Temperature TJ, T
(TA=25°C unless otherwise specified)
40 V
CBO
30 V
CEO
4 V
EBO
150, -55~150 °C
STG
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit
Collector to Base Breakdown Voltage V
Collector to Emitter Breakdown Voltage V
Emitter to Base Breakdown Voltage V
Collector Cut–Off Current I
Emitter Cut–Off Current I
40 - - V IC=100µA, IE=0
(BR)CBO
(BR)CEO
(BR)EBO
- - 0.5 µA VCB=40V, IE=0
CBO
- - 0.5 µA VEB=4V, IC=0
EBO
30 - - V IC=1mA, IB=0
4 - - V IE=100µA, IC=0
Test Condition
DC Current Gain hFE 40 - 200 VCE=6V, IC=1mA
Reverse Transfer Capacitance Cre - 0.7 - pF VCE=6V, f=1MHz
Collector-Base Time Constant CC • rbb - - 30 pS VCE=6V, IE= -1mA, f=30MHz
Transition Frequency fT - 550 - MHz VCE=6V, IC=1mA
Power Gain Gpe - 18 - dB
Noise Figure NF - - 5 dB
VCC=6V, IC=1mA, f=100MHz
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
09-Apr-2012 Rev. A Page 1 of 2
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
2SC2668
0.02A , 40V
NPN Plastic-Encapsulated Transistor
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
09-Apr-2012 Rev. A Page 2 of 2
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