Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2658
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
APPLICATIONS
·Designed for high speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER MAX UNIT
= 500V (Min)
=25℃)
a
V
V
V
I
T
CBO
CEO
EBO
I
C
CM
P
C
T
stg
Collector-Base Voltage 800 V
Collector-Emitter Voltage 500 V
Emitter-Base Voltage 8 V
Collector Current-Continuous 5 A
Collector Current-Peak 10 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150
j
Storage Temperature Range -65~150
90 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2658
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Switching Times
t
on
Collector-Emitter Sustaining Voltage IC= 0.2A ; L= 25mH 500 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.0 V
Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V
Collector Cutoff Current VCB= 800V;IE= 0 0.1 mA
Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA
DC Current Gain IC= 0.1A ; VCE= 5V 15
DC Current Gain IC= 3A ; VCE= 5V 8
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz
Turn-On Time 1
μs
= 3A ;IB1= -IB2= 0.6A
t
stg
t
f
Storage Time 3
Fall Time
I
C
1
μs
μs
isc Website：www.iscsemi.cn
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