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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2654
DESCRIPTION
·High Collector Current:: IC= 7A
·Low Collector Saturation Voltage
:V
·Complement to Type 2SA1129
APPLICATIONS
·Designed for low-frequency power amplifiers and mid-speed
switching applications.
·Ideal for use in a lamp driver.
ABSOLUTE MAXIMUM RATINGS(T
= 0.3(V)(Max)@IC= 3A
CE(sat)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
I
B
C
J
Collector-Base Voltage 100 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 7 A
Collector Current-Peak 15 A
B Base Current- Continuous 3.5 A
Total Power Dissipation
=25℃
@ T
a
Total Power Dissipation
@ TC=25℃
Junction Temperature 150
1.5
W
40
℃
T
stg
Storage Temperature Range -55~150
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2654
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)-1
V
BE
(sat)-2
I
CBO
I
EBO
h
FE-1
h
FE-2
Switching Times
t
on
t
stg
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.1A B 0.3 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 0.6 V
Base-Emitter Saturation Voltage IC= 3A; IB= 0.1A B 1.5 V
Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V
Collector Cutoff Current VCB= 40V ; IE= 0 10 μA
Emitter Cutoff Current VEB= 5V; IC= 0 10 μA
DC Current Gain IC= 3A ; VCE= 1V 40 320
DC Current Gain IC= 5A ; VCE= 1V 20
Turn-on Time 1.0 μs
Storage Time 2.5 μs
= 5A ,RL= 4Ω,
I
C
IB1= -IB2= 0.5A,VCC≈ 20V
1.0 μs
h
t
f
FE-1
Fall Time
Classifications
M L K J
40-80 60-120 100-200 160-320
isc Website：www.iscsemi.cn
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