Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2650
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Switching regulator applicaition.
·High voltage switching application.
·High speed DC-DC converter application.
ABSOLUTE MAXIMUM RATINGS(T
= 400V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
B
C
T
J
stg
Collector-Base Voltage 500 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 10 A
B Base Current-Continuous 5 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
100 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2650
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
Switching Times
t
r
t
stg
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 500 V
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V
Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V
Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V
Collector Cutoff Current VCB= 400V ; IE= 0 100
Emitter Cutoff Current VEB= 7V ; IC= 0 1 mA
DC Current Gain IC= 5A ; VCE= 5V 10
Rise Time 1.0
Storage Time 2.5
= 5A; IB1= -IB2= 0.5A;
I
C
RL= 40Ω; VCC= 200V;
Duty Cycle≤1%
μA
μs
μs
t
f
Fall Time
isc Website：www.iscsemi.cn
2
1.0
μs
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