Page 1
Transistor
2SC2634
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SA1127
Features
■
●
Low noise voltage NV.
●
High foward current transfer ratio hFE.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
*
h
FE
V
CE(sat)
V
BE
f
T
NV
Ratings
60
55
7
200
100
400
150
–55 ~ +150
VCB = 10V, IE = 0
VCE = 10V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 5V, IC = 2mA
ICE = 100mA, IB = 10mA
VCE = 1V, IC = 30mA
VCB = 5V, IE = –2mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
Unit
V
V
V
mA
mA
mW
˚C
˚C
Conditions
5.0±0.2 4.0±0.2
5.1±0.213.5±0.5
+0.2
0.45
–0.1
1.27 1.27
213
2.54±0.15
min
typ
1
0.01
60
55
7
180
200
+0.2
0.45
–0.1
1:Emitter
2.3±0.2
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
max
100
1
700
0.6
1
150
Unit: mm
Unit
nA
µA
V
V
V
V
V
MHz
mV
*
hFE Rank classification
Rank R S T
h
FE
180 ~ 360 260 ~ 520 360 ~ 700
1
Page 2
Transistor
2SC2634
PC — Ta IC — V
500
)
mW
(
400
C
300
200
100
Collector power dissipation P
0
0 20016040 12080
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
25˚C
Collector current IC (mA
)
C
IC/IB=10
Ta=75˚C
–25˚C
)
CE
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
012108264
IB=400µA
350µA
Collector to emitter voltage VCE (V
hFE — I
C
1000
FE
800
600
Ta=75˚C
400
200
25˚C
–25˚C
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
Collector current IC (mA
Ta=25˚C
300µA
250µA
200µA
150µA
100µA
50µA
VCE=5V
)
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
02.01.60.4 1.20.8
)
Base to emitter voltage VBE (V
400
350
)
MHz
300
(
T
250
200
150
100
Transition frequency f
50
0
–1 –3 –10 –30 –100
IC — V
BE
25˚C
Ta=75˚C –25˚C
fT — I
VCE=5V
E
VCB=5V
Ta=25˚C
Emitter current IE (mA
)
)
)
pF
(
Cob — V
10
8
ob
6
4
2
CB
Collector output capacitance C
0
1 3 10 30 100
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
NF — I
E
8
7
)
6
dB
(
5
4
3
Noise figure NF
2
1
0
–10 –30 –100 –300 –1000
Emitter current IE (µA
VCE=5V
=1kΩ
R
g
Ta=25˚C
f=100Hz
1kHz
10kHz
)
NV — I
C
120
100
)
mV
(
80
60
40
Noise voltage NV
20
0
0.01 0.03 0.1 0.3 1
VCE=10V
G
=80dB
V
Function=FLAT
Rg=100kΩ
22kΩ
5kΩ
Collector current IC (mA
)
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