Page 1
Transistor
2SC2631
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SA1123
Features
■
●
Satisfactory linearity of forward current transfer ratio hFE.
●
High collector to emitter voltage V
●
Small collector output capacitance Cob.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
I
CBO
V
CEO
V
EBO
*
h
FE
V
CE(sat)
f
T
C
ob
NV
.
CEO
Ratings
–55 ~ +150
Unit
150
150
5
100
50
750
150
V
V
V
mA
mA
mW
˚C
˚C
Conditions
VCB = 100V, IE = 0
IC = 0.1mA, IB = 0
IE = 10µA, IC = 0
VCE = 5V, IC = 10mA
IC = 30mA, IB = 3mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
5.0±0.2 4.0±0.2
5.1±0.213.5±0.5
+0.2
0.45
–0.1
1.27 1.27
213
2.54±0.15
min
typ
150
5
130
160
150
+0.2
0.45
–0.1
1:Emitter
2.3±0.2
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
max
330
300
1
1
3
Unit: mm
Unit
µA
V
V
V
MHz
pF
mV
*
hFE Rank classification
Rank R S
h
FE
130 ~ 220 185 ~ 330
1
Page 2
Transistor
2SC2631
PC — Ta IC — V
1.0
)
W
(
0.8
C
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
hFE — I
C
600
FE
500
400
300
200
Ta=75˚C
25˚C
–25˚C
VCE=10V
V
BE
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
0 2.01.60.4 1.20.8
)
Base to emitter voltage VBE (V
25˚C
Ta=75˚C –25˚C
fT — I
300
)
250
MHz
(
T
200
150
100
E
VCE=10V
VCB=10V
f=100MHz
Ta=25˚C
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
)
Collector current IC (mA
5
)
pF
(
4
ob
3
2
— I
CE(sat)
Cob — V
25˚C
CB
C
IC/IB=10
Ta=75˚C
–25˚C
IE=0
f=1MHz
Ta=25˚C
)
100
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
Collector current IC (mA
50
Transition frequency f
1
Collector output capacitance C
0
–1 –3 –10 –30 –100
)
Emitter current IE (mA
)
0
1 3 10 30 100
Collector to base voltage VCB (V
)
2
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