Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2616
DESCRIPTION
·High Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
APPLICATIONS
·Designed for high voltage, high speed and high power
switching applications.
ABSOLUTE MAXIMUM RATINGS(T
= 400V (Min)
=25℃)
a
SYMBOL PARAMETER MAX UNIT
V
V
V
I
CBO
CEO
EBO
I
C
CM
I
B
P
C
T
Collector-Base Voltage 500 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 10 A
Collector Current-Peak 20 A
B Base Current-Continuous 5 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150
j
100 W
℃
T
stg
Storage Temperature Range -55~150
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2616
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
CEO(SUS)
V
CEX(SUS)
Collector-Emitter Sustainig Voltage
Collector-Emitter Sustainig Voltage
= 0.2A; RBE= ∞; L= 100mH
C
= 5A; IB1=-IB2= 1A,
I
C
VBE= -5V; L=180μH,clamped
400 V
400 V
V
CE
(sat)
V
BE
(sat)
h
FE-1
h
FE-2
I
CBO
I
CEO
I
EBO
Switching Times
t
r
t
stg
Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.2 V
Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.7 V
DC Current Gain IC= 5A; VCE= 5V 15
DC Current Gain IC= 10A; VCE= 5V 7
Collector Cutoff Current VCB= 400V; IE= 0 0.1 mA
Collector Cutoff Current
Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA
Rise Time 1.0
Storage Time 2.5
V
= 350V; RBE= ∞
CE
= 10A; IB1= -IB2= 2A,
I
C
≈ 150V
V
CC
0.1 mA
μs
μs
t
f
Fall Time
isc Website：www.iscsemi.cn
1.0
μs
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