Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2615
DESCRIPTION ·
·With TO-247 package
·High voltage,high speed
APPLICATIONS
·For high voltage,high speed and high
power switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 8 A
PC Collector power dissipation TC=25℃ 80 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2615
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=0.2A; IB=0 400 V
Emitter-base breakdown voltage IE=10mA; IC=0 7 V
Collector-emitter saturation voltage IC=4A ;IB=0.8A 1.0 V
Base-emitter saturation voltage IC=4A ;IB=0.8A 1.5 V
Collector cut-off current VCB=400V; IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 0.1 mA
DC current gain IC=4A ; VCE=5V 15
DC current gain IC=8A ; VCE=5V 7
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2615
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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