Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2608
DESCRIPTION
·With TO-3 package
·Complement to type 2SA1117
·High power dissipation
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 17 A
PC Collector power dissipation
Tj
Collector-base voltage Open emitter 200 V
Collector-emitter voltage Open base 200 V
Emitter-base voltage Open collector 6 V
Junction temperature 150
=25℃)
C
T
=25℃
C
200 W
℃
T
stg
Storage temperature -55~150
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2608
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=25mA ;IB=0 200 V
Collector-base breakdown voltage IC=1mA ;IE=0 200 V
Emitter-base breakdown voltage IE=1mA ;IC=0 6 V
Collector-emitter saturation voltage I
=8A; IB=0.8A 2.0 V
C
Collector cut-off current VCB=200V; IE=0 0.1 mA
Emitter cut-off current VEB=6V; IC=0 0.1 mA
hFE DC current gai n IC=8A ; VCE=4V 20
fT Transition frequency IC=1A ; VCE=12V 20 MHz
2
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2608
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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