Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2594
DESCRIPTION ·
·With TO-126 package
·Low saturation voltage
APPLICATIONS
·AF power amplifier
·For electronic flash unit
·Converter
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
ABSOLUTE MAXIMUM RATINGS (T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -DC 5 A
ICM Collector current-Peak 7 A
PC Collector power dissipation
Tj
Collector-base voltage Open emitter 40 V
Collector-emitter voltage Open base 20 V
Emitter-base voltage Open collector 7 V
Junction temperature 150
=25℃)
C
T
=25℃
C
10 W
℃
T
stg
Storage temperature -55~150
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2594
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
I
CBO
h
FE-1
h
FE-2
(sat)
Collector-emitter breakdown voltage IC=1mA IB=0 20 V
Collector-base breakdown voltage IC=10μA ;IE=0 40 V
Emitter-base breakdown voltage IE=10μA; IC=0 7 V
Collector-emitter saturation voltage I
=3.0A; IB=0.1A(Pulse test) 1.0 V
C
Collector cut-off current VCB=10V; IE=0 0.1 μA
DC current gain IC=0.5A ; VCE=2V(Pulse test) 140 450
DC current gain IC=1A ; VCE=2V(Pulse test) 70
fT Transition frequency IE=-50mA ; VCB=6V 150 MHz
COB Output capacitance IE=0 ; VCB=20V,f=1MHz 50 pF
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2594
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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