Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2582
DESCRIPTION ·
·With TO-126 package
·Large collector power dissipation
·High transition frequency
APPLICATIONS
·Audio frequency power amplifier
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage 45 V
CBO
V
Collector- emitter voltage 35 V
CEO
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current 1 A
ICM Collector current-peak 1.5 A
PC Collector power dissipation
℃)
Ta=25℃
=25℃
T
C
1.2
W
10
Tj Junction temperature 150
T
Storage temperature
stg
℃
-55～+150 ℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2582
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
Collector-emitter breakdown voltage IC=2mA ;IB=0 35 V
(BR)CEO
Collector-base breakdown voltage IC=1mA ;IE=0 45 V
(BR)CBO
V
Collector-emitter saturation voltage IC=500mA ;IB=50mA 0.5 V
CEsat
I
Collector cut-off current VCE=20V; IB=0 100
CEO
I
Collector cut-off current VCB=20V; IE=0 0.1
CBO
I
Emitter cut-off current VEB=5V; IC=0 10
EBO
h
DC current gain IC=500mA ; VCE=10V 85 340
FE-1
h
DC current gain IC=1A ; VCE=5V 50
FE-2
COB Output capacitance IE=0; VCB=10V;f=1MHz 20 pF
μA
μA
μA
fT Transition frequency IC=50mA ; VCE=10V 200 MHz
h
Classifications
FE-1
Q R S
85-170 120-240 170-340
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2582
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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