Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2563
DESCRIPTION
·With TO-3P(I) package
·High power dissipation
APPLICATIONS
·For audio power amplifier and general
purpose applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
PT Total power dissipation
Tj
Collector-base voltage Open emitter 120 V
Collector-emitter voltage Open base 120 V
Emitter-base voltage Open collector 5 V
Junction temperature 150
=25℃)
C
T
=25℃
C
80 W
℃
T
stg
Storage temperature -55~150
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2563
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
Collector-emitter breakdown voltage IC=25mA ,IB=0 120 V
(BR)CEO
Emitter-base breakdown voltage IE=1mA ,IC=0 5 V
(BR)EBO
V
CE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter saturation voltage I
Collector cut-off current VCB=120V; IE=0 50
Emitter cut-off current VEB=5V; IC=0 50
DC current gain IC=1A ; VCE=5V 55 160
DC current gain IC=4A ; VCE=5V 35
=4A; IB=0.4A 2.0 V
C
μA
μA
fT Transition frequency IC=1A ; VCE=5V 90 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2563
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Loading...