Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2553
DESCRIPTION
·With TO-220C package
·High collector breakdown voltage
: V
=400V(Min)
CEO
·Excellent switching time
=1.0μs(Max.)
: t
r
: tf=1.0μs(Max.@IC=4A
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
·
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
IB Base current 1 A
PC Collector dissipation
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
℃)
Ta=25℃ 1.5
W
TC=25℃ 40
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2553
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Switching times
tr Rise time 1.0 μs
t
stg
Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V
Collector-base breakdown voltage IC=1mA ; IE=0 500 V
Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V
Base-emitter saturation voltage IC=5A; IB=1A 1.5 V
Collector cut-off current VCB=400V ;IE=0 100 μA
Emitter cut-off current VEB=7V; IC=0 1 mA
DC current gain IC=3A ; VCE=5V 12
DC current gain IC=5A ; VCE=5V 8
≈200V; IC=4A
V
CC
Storage time 2.5 μs
IB1=-IB2=0.4A;RL=50Ω
Duty cycle≤1%
tf Fall time
2
1.0 μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2553
PACKAGE OUTLINE
3
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2553
4
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