Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2552
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·Fast Switching Speed
APPLICATIONS
·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(T
(BR)CEO
= 400V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
I
B
T
Collector-Base Voltage 500 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 2 A
B Base Current-Continuous 0.5 A
Total Power Dissipation
@ T
=25℃
a
C
Total Power Dissipation
@ T
=25℃
C
Junction Temperature 150
J
1.5
20
W
℃
T
stg
Storage Temperature Range -55~150
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2552
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
Switching times
t
r
t
stg
Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V
Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 500 V
Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.0 V
Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.5 V
Collector Cutoff Current VCB= 400V ; IE= 0 100
Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA
DC Current Gain IC= 0.1A ; VCE= 5V 20
DC Current Gain IC= 1A ; VCE= 5V 8
Rise Time 1.0
Storage Time 2.5
≈ 200V, RL= 250Ω,
V
CC
= -IB2= 0.08A,
I
B1
μA
μs
μs
t
f
Fall Time
1.0
μs
isc Website：www.iscsemi.cn
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