Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2527
DESCRIPTION ·
·With TO-220C package
·Complement to type 2SA1077
·Fast switching speed
·Excellent safe operating area
APPLICATIONS
·High frequency power amplifiers
·Audio power amplifiers
·Switching regulators
·DC-DC converters
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
PC Collector power dissipation
Collector-base voltage Open emitter 120 V
Collector-emitt er voltage Open base 120 V
Emitter-base voltage Open collector 7 V
℃)
T
=25℃
C
60 W
Tj Junction temperature 150
T
Storage temperature -65~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2527
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
VBE Base-emitter on voltage IC=5 A ; VCE=5V 1.7 V
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE -2
Collector-emitter breakdown voltage IC=1mA ; RBE=∞ 120 V
Collector-base breakdown voltage IC=50μA ; IE=0 120 V
Emitter-base breakdown voltage IE=50μA ; IC=0 7 V
Collector-emitter saturation voltage IC=5A; IB=0.5A 1.8 V
Collector cut-off current VCB=120V ;IE=0 50 μA
Collector cut-off current VCE=120V; IB=0 1 mA
Emitter cut-off current VEB=7V ;IC=0 50 μA
DC current gain IC=1 A ; VCE=5V 60 200
DC current gain IC=5 A ; VCE=5V 40
fT Transition frequency IC=1 A ; VCE=10V 80 MHz
COB Output capacitance IE=0 ; VCB=10V; f=1MHz 180 pF
Switching times
tr Rise time 0.3 μs
ts Storage time 1.3 μs
tf Fall time
IC=7.5 A; RL=4Ω
=-IB2=0.75A
I
B1
0.2 μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2527
PACKAGE OUTLINE
3
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
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