Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2525
DESCRIPTION ·
·With MT-200 package
·Complement to type 2SA1075
·Excellent safe operating area
·Ultra fast switching speed
APPLICATIONS
·Suited for high frequency power amplifiers,
audio power amplifiers,switching regulators
and DC-DC converters applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 12 A
PC Collector power dissipation TC=25℃ 120 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 120 V
Collector-emitter voltage Open base 120 V
Emitter-base voltage Open collector 7 V
℃)
T
Storage temperature -65~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2525
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage IC=5 A;IB=0.5 A 0.7 1.8 V
Base-emitter voltage IC=5A ; VCE=5V 1.25 1.7 V
=1mA; RBE=∞
C
I
=50μA; IE=0
C
I
=50μA; IC=0
E
120 V
120 V
7 V
I
Collector cut-off current VCB=120V; IE=0 50
CBO
I
Emitter cut-off current VEB=7V; IC=0 50
EBO
h
DC current gain IC=1A ; VCE=5V 60 200
FE-1
h
DC current gain IC=7A ; VCE=5V 40
FE-2
μA
μA
fT Transition frequency IC=1A ; VCB=10V,f=1MHz 50 80 MHz
COB Output capacitance IE=0; VCB=10V;f=1MHz 180 300 pF
Switching times
tr Rise time 0.3
=7.5A; RL=4Ω
I
ts Storage time 1.3
tf Fall time
C
=-IB2=0.75A
I
B1
0.2
μs
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2525
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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