Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2523
DESCRIPTION
·With TO-3 package
·Complement to type 2SA1073
·Wide area of safe operation
APPLICATIONS
·High frequency power amplifier
·Audio power amplifiers
·Switching regulators
·DC-DC converters
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 12 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 160 V
Collector-emitter voltage Open base 160 V
Emitter-base voltage Open collector 7 V
℃)
T
=25℃
C
120 W
℃
T
Storage temperature -65~150
stg
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2523
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
V
V
Collector-emitter breakdown voltage
(BR)CEO
Collector-base breakdown voltage
(BR)CBO
(BR)EBO
V
CEsat
V
BE
Emitter-base breakdown voltage
Collector-emitter saturation voltage IC=5A ;IB=0.5A 1.8 V
Base-emitter on voltage IC=5A ; VCE=5V 1.7 V
=1mA ;RBE=∞
C
I
=50μA ;IE=0
C
I
=50μA ;IC=0
E
160 V
160 V
7 V
I
Collector cut-off current VCB=160V; IE=0 50
CBO
V
I
Collector cut-off current
CEO
I
Emitter cut-off current VEB=7V; IC=0 50
EBO
h
DC current gain IC=1A ; VCE=5V 60 200
FE-1
h
DC current gain IC=7A ; VCE=5V 40
FE-2
=160V; RBE=∞
CE
1 mA
μA
μA
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 300 pF
fT Transition frequency IC=1A ; VCE=10V;f=10MHz 50 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2523
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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