Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2488
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V
(BR)CEO
·Good Linearity of h
·Wide Area of Safe Operation
·Complement to Type 2SA1064
APPLICATIONS
·Designed for AF amplifier, high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 150V(Min.)
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
T
T
stg
Collector-Base Voltage 150 V
Collector-Emitter Voltage 150 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 8 A
Collector Current-Peak 12 A
Collector Power Dissipation
C
j
=25℃
@T
C
Junction Temperature 150
Storage Temperature -65~150
100 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2488
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
h
(BR)CEO
CE
(sat)
BE
(on)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
FE-2
Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 150 V
Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A B 2.0 V
Base-Emitter On Voltage IC= 8A; VCE= 5V 2.5 V
Collector Cutoff Current VCB= 70V; IE= 0 1 mA
Emitter Cutoff Current VEB= 5V; IC= 0 2 mA
DC Current Gain IC= 1A; VCE= 5V 40 280
DC Current Gain IC= 8A; VCE= 5V 20
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 50 MHz
Classifications
R Q P O
40-80 60-120 90-180 140-280
isc Website：www.iscsemi.cn
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