Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2485
DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1061
·High collector power dissipation
APPLICATIONS
·High power audio frequency amplifier
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS MAX UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 6 A
ICP Collector current (Pulse) 10 A
PC Collector power dissipation
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
70 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2485
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
fT Transition frequency IC=0.5A ; VCE=5V 20 MHz
h
FE-2
Collector-emitter breakdown voltage IC=10mA ;IB=0 100 V
Collector-emitter saturation voltage IC=4A; IB=0.4A 2.0 V
Base-emitter on voltage IC=4A;VCE=5V 1.8 V
Collector cut-off current VCB=100V; IE=0 50
Emitter cut-off current VEB=3V; IC=0 50
DC current gain IC=0.2A ; VCE=5V 20
DC current gain IC=1A ; VCE=5V 40 200
DC current gain IC=4A ; VCE=5V 20
μA
μA
Classifications
R Q P
40-80 60-120 100-200
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2485
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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