Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2484
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·High Power Dissipation
·Complement to Type 2SA1060
APPLICATIONS
·Designed for high power audio frequency amplifier
applications
ABSOLUTE MAXIMUM RATINGS(T
= 80V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
C
T
J
stg
Collector-Base Voltage 80 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 5 A
Collector Current-Peak 8 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
60 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2484
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
V
BE
I
I
h
h
h
h
Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 80 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 2.0 V
Base-Emitter On Voltage IC= 3A; VCE= 5V 1.8 V
Collector Cutoff Current VCB= 80V; IE= 0 50
Emitter Cutoff Current VEB= 3V; IC= 0 50
DC Current Gain IC= 20mA ; VCE= 5V 20
DC Current Gain IC= 1A ; VCE= 5V 40 220
DC Current Gain IC= 3A; VCE= 5V 20
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 20 MHz
Classifications
CBO
EBO
FE-1
FE-2
FE-3
f
T
(sat)
(on)
FE-2
μA
μA
R Q P
40-80 60-120 100-200
isc Website：www.iscsemi.cn
2
Loading...