Page 1
Application
• UHF Amplifier
• UHF TV Tuner, Local oscillator
Outline
TO-92 (2)
2SC2471
Silicon NPN Epitaxial
1. Base
2. Emitter
3. Collector
3
2
1
Page 2
2SC2471
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
Emitter cutoff current I
Collector to emitter saturation
V
CBO
EBO
CE(sat)
voltage
Base to emitter voltage V
DC current transfer ratio h
Gain bandwidth product f
BE
FE
T
Collector output capacitance Cob — 0.9 1.5 pF VCB = 10 V, IE = 0, f = 1 MHz
Base time constant r
• CC—1220psVCB = 10 V, IC = 5 mA,
bb’
30 — — V IC = 10 µA, IE = 0
30 — — V IC = 1 mA, RBE = ∞
3——VI
— — 100 nA V
— — 100 nA V
— — 300 mV IC = 10 mA, IB = 5 mA
— — 0.95 V V
20 — — V
1000 2000 — MHz VCE = 10 V, IC = 5 mA
30 V
30 V
3V
50 mA
310 mW
= 10 µA, IC = 0
E
= 24 V, IE = 0
CB
= 2 V, IC = 0
EB
= 10 V, IC = 5 mA
CE
= 10 V, IC = 5 mA
CE
f = 31.8 MHz
2
Page 3
Maximum Collector Dissipation Curve
400
(mW)
C
300
FE
2SC2471
DC Current Transfer Ratio vs.
Collector Current
100
VCE = 10 V
80
60
200
100
Collector Power Dissipation P
0
Ambient Temperature Ta (°C)
Gain Bandwidth Product vs.
Collector Current
2,500
2,000
(MHz)
T
1,500
1,000
500
Gain Bandwidth Product f
0
Collector Current I
VCE = 10 V
20 5010251
(mA)
C
40
20
DC Current Transfer Ratio h
15010050
0
21 5 10 5020
Collector Current I
(mA)
C
Collector Output Capacitance vs.
Collector to Base Voltage
5
(pF)
ob
f = 1 MHz
= 0
I
E
2
1.0
0.5
0.2
Collector Output Capacitance C
0.1
5012 51020
Collector to Base Voltage V
CB
(V)
3
Page 4
2SC2471
Base Time Constant vs.Collector Current
50
(ps)
40
C
•C
bb'
30
20
10
Best Time Constant r
0
12 208164
Collector Current I
Output Admittance vs. Frequency
100
VCB = 10 V
50
I
= 5 mA
C
Common Base
20
(mS)
y
= gob + jb
ob
ob
10
ob
5
2
1.0
0.5
Output Admittance y
0.2
0.1
Frequency f (MHz)
VCB = 10 V
f = 31.8 MHz
(mA)
C
b
ob
g
ob
Input Admittance vs. Frequency
100
50
20
(mS)
ib
10
VCB = 10 V
I
= 5 mA
C
Common Base
5
y
= gib + jb
ib
ib
b
ib
g
ib
2
1.0
0.5
Input Admittance y
0.2
0.1
100 200 500 1,000
Frequency f (MHz)
Forward Transfer Admittance vs.
Frequency
100
(mS)
fb
80
VCB = 10 V
60
I
= 5 mA
C
Common Base
40
y
fb
20
0
= gfb + jb
fb
b
fb
g
fb
–20
–40
–60
–80
Forward Transfer Admittance y
1,000500200100
–100
1,000100 500200
Frequency f (MHz)
4
Page 5
2SC2471
Reverse Transfer Admittance vs.
Frequency
4
(mS)
rb
VCB = 10 V
2
I
= 5 mA
C
Common Base
= grb + jb
y
rb
0
rb
–2
–4
Reverse Transfer Admittance y
–6
Frequency f (MHz)
g
rb
b
rb
1,000100 500200
5
Page 6
Unit: mm
0.60 Max
0.45 ± 0.1
4.8 ± 0.3
1.27
2.54
0.7
5.0 ± 0.2
2.3 Max
12.7 Min
3.8 ± 0.3
0.5
Hitachi Code
JEDEC
EIAJ
(reference value)
Weight
TO-92 (2)
Conforms
Conforms
0.25 g
Page 7
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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