Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2460
DESCRIPTION
·With TO-3 package
·Complement to type 2SA1050
·Excellent safe operating area
APPLICATIONS
·For audio and general purpose
power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 12 A
PC Collector power dissipation
Collector-base voltage Open emitter 140 V
Collector-emitter voltage Open base 140 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
100 W
Tj Junction temperature 175
T
Storage temperature -55~200
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2460
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
Collector-emitter breakdown voltage IC=25mA ;IB=0 140 V
Collector-base breakdown voltage IC=1mA ;IE=0 140 V
Emitter-base breakdown voltage IE=1mA ;IC=0 5 V
Collector-emitter saturation voltage IC=8A; IB=0.8A 2.5 V
VBE Base-emitter on voltage IC=6A ; VCE=5V 1.5 V
I
Collector cut-off current VCB=140V; IE=0 10
CBO
I
Emitter cut-off current VEB=5V; IC=0 10
EBO
h
DC current gain IC=1A ; VCE=5V 55 240
FE-1
h
DC current gain IC=6A ; VCE=-5V 35
FE-2
μA
μA
fT Transition frequency IC=1A ; VCE=10V 70 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2460
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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