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固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2438
DESCRIPTION ·
·With TO-220C package
·Low collector saturation voltage
·High reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 7 A
IB Base current 2 A
PC Collector power dissipation TC=25℃ 50 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 150 V
Collector-emitt er voltage Open base 80 V
Emitter-base voltage Open collector 7 V
T
Storage temperature -55~150 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction case 2.5 ℃/W
th j-C
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2438
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Switching times
ton
Collector-emitter breakdown voltage IC=10mA ; IB=0 80 V
Collector-base breakdown voltage IC=100μA ; IE=0 150 V
Emitter-base breakdown voltage IE=100μA ; IC=0 7 V
Collector-emitter saturation voltage IC=4A; IB=0.4A 0.5 V
Base-emitter saturation voltage IC=4A; IB=0.4A 1.2 V
Collector cut-off current VCB=150V ;IE=0 100 μA
Emitter cut-off current VEB=7V; IC=0 100 μA
DC current gain IC=4 A ; VCE=1V 30
Turn-on time 0.5 μs
ts
tf
Storage time 2.5 μs
Fall time
2
=4A; IB1=0.4A
I
C
=-0.4A;RL=5Ω
I
B2
0.3 μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2438
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2438
4
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