Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2437
DESCRIPTION
·With TO-3 package
·High voltage,high speed switching
·High reliability
APPLICATIONS
·Switching regulators
·DC-DC convertor
·Solid state relay
·General purpose power amplifiers
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 7 A
IB Base current 2 A
PC Collector power dissipation TC=25℃ 100 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 450 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2437
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=10mA ;IB=0 400 V
(BR)CEO
(BR)CBO
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-base breakdown voltage IC=1mA ;IE=0 450 V
Emitter-base breakdown voltage IE=0.1mA ;IC=0 7 V
Collector-emitter saturation voltage IC=7A; IB=1.4A 1.5 V
Base-emitter saturation voltage IC=7A; IB=1.4A 1.2 V
Collector cut-off current VCB=450V; IE=0 1.0 mA
Emitter cut-off current VEB=7V; IC=0 0.1 mA
hFE DC current gai n IC=3A ; VCE=4V 10
Switching times
ton Turn-on time 1.5 μs
t
Storage time 3.0 μs
stg
IC=7A; IB1=-IB2=1.4A
=30Ω;PW=20μs;Duty≤2%
R
L
tf Fall time
1.5 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2437
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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